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| MBR5045 chips for schottky diodes chip specification general description: schottky diode chips with mo-barrier for switch mode power rectifiers with the following features: * guard-ring for stress protection * extremely low forward voltage * 125 operation junction temperature * reverse avalanche behavior mechanical data: MBR5045 passivated silicon chip dimension(mil): 200x200 mil thickness: 350 +- 20 m metallization: top ( anode ) : alag bottom ( cathode) : tiniag forward current (a): 50a reverse voltage (v): >45v type chip vf(v)@25 c vf(v)@125 c i rm @v rmm size(mil) at if =50a at if =50a at 25 c MBR5045 200x200 600mv 550mv 0,6ma * expected value for recommended assembling with both side soldering typical device :1n6392 note: other voltages & top metal al are available
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